SiO2/PbTe quantum-dot multilayer production and characterization

E Rodriguez, E Jimenez, L A Padilha, A A R Neves, G J Jacob, C L Cesar, L C Barbosa

Full text: http://dx.doi.org/10.1063/1.1887823

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Abstract

We report the fabrication of multilayer structures containing layers of PbTe quantum dots (QDs) spaced by 15-20 nm thick SiO2 layers. The QDs were grown by the laser ablation of a PbTe target using the second harmonic of Nd:YAG laser in an argon atmosphere. The SiO2 layers were fabricated by plasma chemical vapor deposition using tetramethoxysilane as a precursor. The influence of the ablation time on the size and size distribution of the QDs is studied by high-resolution transmission electron microscopy. Optical absorption measurements show clearly the QDs confinement effects. (C) 2005 American Institute of Physics.

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